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Ordering number : ENA1543A
ATP602
N-Channel Power MOSFET
600V, 5A, 2.7 Ω , ATPAK
Features
http://onsemi.com
?
?
ON-resistance RDS(on)=2.1 Ω (typ.)
10V drive
?
?
Input capacitance Ciss=350pF (typ.)
Halogen free compliance
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
600
±30
5
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
IDP
PD
Tch
Tstg
EAS
IAV
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25 ° C
15
70
150
--55 to +150
74
5
A
W
° C
° C
mJ
A
Note : * 1 VDD=99V, L=5mH, IAV=5A (Fig.1)
* 2 L ≤ 5mH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
ATP602-TL-H
Product & Package Information
? Package : ATPAK
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
6.5
1.5
4.6
Packing Type: TL
Marking
2.6
4
0.4
0.4
ATP602
LOT No.
TL
Electrical Connection
2,4
1
2
3
0.55
0.8
0.6
0.4
1 : Gate
2.3
2.3
2 : Drain
3 : Source
1
4 : Drain
Semiconductor Components Industries, LLC, 2013
July, 2013
ATPAK
3
62712 TKIM/12710QB TKIM TC-00002087 No. A1543-1/7
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